@article {873, title = {Picosecond Electronic Relaxation in CdS/HgS/CdS Quantum Dot Quantum Well Semiconductor Nanoparticles}, journal = {The Journal of Physical Chemistry }, volume = {100}, year = {1996}, note = {doi: 10.1021/jp953708m}, month = {1996}, pages = {6381 - 6384}, publisher = {American Chemical Society}, abstract = {Subpicosecond photoexcitation of CdS/HgS/CdS quantum dot quantum well nanoparticles at wavelengths shorter than their interband absorption (390 nm) leads to a photobleach spectrum at longer wavelengths (440?740 nm). The photobleach spectrum changes and its maximum red-shifts with delay time. These results are explained by the rapid quenching of the initially formed laser-excited excitons by two types of energy acceptors (traps); one is proposed to be due to CdS molecules at the CdS/HgS interface, and the other trap is that present in the CdS/HgS/CdS well. The results of the excitation at longer wavelengths as well as the formation and decay of the bleach spectrum at different wavelengths support this description.Subpicosecond photoexcitation of CdS/HgS/CdS quantum dot quantum well nanoparticles at wavelengths shorter than their interband absorption (390 nm) leads to a photobleach spectrum at longer wavelengths (440?740 nm). The photobleach spectrum changes and its maximum red-shifts with delay time. These results are explained by the rapid quenching of the initially formed laser-excited excitons by two types of energy acceptors (traps); one is proposed to be due to CdS molecules at the CdS/HgS interface, and the other trap is that present in the CdS/HgS/CdS well. The results of the excitation at longer wavelengths as well as the formation and decay of the bleach spectrum at different wavelengths support this description.}, isbn = {0022-3654}, url = {http://dx.doi.org/10.1021/jp953708m}, author = {Kamalov, Valey F. and Little, Reginald and Logunov, Stephan L. and El-Sayed, Mostafa A} }