%0 Journal Article %J Journal of Physical Chemistry A %D 2001 %T Variation of the thickness and number of wells in the CdS/HgS/CdS quantum dot quantum well system %A Braun, Markus %A Burda, Clemens %A El-Sayed, Mostafa A %X We report on the first chemically prepared multilayer quantum well structure in a semiconductor quantum dot. By subsequent precipitation of HgS, CdS, HgS, and again CdS from aqueous solution, we obtained nanoparticles which contain two HBS quantum wells separated by a double layer of CdS. The:core:and the capping material is also CdS. The two-well system was characterized by absorption and emission spectroscopy, which clearly reveal the formation of a two-well and not a single double-layered quantum well system. This system allows to study the interaction of quantum wells that are separated by different thicknesses of the CdS barriers. The radiative and relaxation dynamics of the new two-well system are compared with the dynamics of systems having a single-layer well and a double-layer well system. %B Journal of Physical Chemistry A %V 105 %P 5548-5551 %8 Jun %@ 1089-5639 %G eng %M WOS:000169371200006 %R 10.1021/jp010002l