<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Schill, A. W.</style></author><author><style face="normal" font="default" size="100%">Gaddis, C. S.</style></author><author><style face="normal" font="default" size="100%">Qian, Wei</style></author><author><style face="normal" font="default" size="100%">El-Sayed, Mostafa A</style></author><author><style face="normal" font="default" size="100%">Cai, Y.</style></author><author><style face="normal" font="default" size="100%">Milam, V. T.</style></author><author><style face="normal" font="default" size="100%">Sandhage, K.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Ultrafast electronic relaxation and charge-carrier localization in CdS/CdSe/CdS quantum-dot quantum-well heterostructures</style></title><secondary-title><style face="normal" font="default" size="100%">Nano Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Sep</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">6</style></volume><pages><style face="normal" font="default" size="100%">1940-1949</style></pages><isbn><style face="normal" font="default" size="100%">1530-6984</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The relaxation and localization times of excited electrons in CdS/CdSe/CdS colloidal quantum wells were measured using subpicosecond spectroscopy. HRTEM analysis and steady-state PL demonstrate a narrow size distribution of 5-6 nm epitaxial crystallites. By monitoring the rise time of the stimulated emission as a function of pump intensity, the relaxation times of the electron from the CdS core into the CdSe well are determined and assigned. Two-component rise times in the stimulated emission are attributed to intraband relaxation of carriers generated directly within the CdSe well ( fast component) and charge transfer of core-localized carriers across the CdS/CdSe interface ( slow component). This is the first reported observation of simultaneous photon absorption in the core and well of a quantum-dot heterostructure. With increasing pump intensity, the charge-transfer channel between the CdS core CdSe well contributes less to the stimulated emission signal because of filling and saturation of the CdSe well state, making the interfacial charge-transfer component less efficient. The interfacial charge-transfer time of the excited electron was determined from the slow component of the stimulated emission build-up time and is found to have a value of 1.2 ps.</style></abstract><accession-num><style face="normal" font="default" size="100%">WOS:000240465100019</style></accession-num><notes><style face="normal" font="default" size="100%">Schill, Alexander W. Gaddis, Christopher S. Qian, Wei El-Sayed, Mostafa A. Cai, Ye Milam, Valeria T. Sandhage, Kenneth</style></notes><electronic-resource-num><style face="normal" font="default" size="100%">10.1021/nl061054v</style></electronic-resource-num></record></records></xml>