Variation of the thickness and number of wells in the CdS/HgS/CdS quantum dot quantum well system

TitleVariation of the thickness and number of wells in the CdS/HgS/CdS quantum dot quantum well system
Publication TypeJournal Article
Year of Publication2001
AuthorsBraun, M, Burda, C, EL-Sayed, MA
JournalJournal of Physical Chemistry A
Volume105
Pagination5548-5551
Date PublishedJun
ISBN Number1089-5639
Accession NumberWOS:000169371200006
Abstract

We report on the first chemically prepared multilayer quantum well structure in a semiconductor quantum dot. By subsequent precipitation of HgS, CdS, HgS, and again CdS from aqueous solution, we obtained nanoparticles which contain two HBS quantum wells separated by a double layer of CdS. The:core:and the capping material is also CdS. The two-well system was characterized by absorption and emission spectroscopy, which clearly reveal the formation of a two-well and not a single double-layered quantum well system. This system allows to study the interaction of quantum wells that are separated by different thicknesses of the CdS barriers. The radiative and relaxation dynamics of the new two-well system are compared with the dynamics of systems having a single-layer well and a double-layer well system.

DOI10.1021/jp010002l